? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c40 v v dgr t j = 25 c to 175 c, r gs = 1m 40 v v gsm transient 20 v i d25 t c = 25 c 100 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c50 a e as t c = 25 c 300 mj p d t c = 25 c 150 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 40 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 2 a v gs = 0v t j = 150 c 50 a r ds(on) v gs = 10v, i d = 25a , notes 1, 2 7 m trencht2 tm power mosfet n-channel enhancement mode avalanche rated ixta100 n04t2 IXTP100N04T2 v dss = 40v i d25 = 100a r ds(on) 7m ds99972(4/08) g = gate d = drain s = source tab = drain to-263 (ixta) g s (tab) to-220 (ixtp) g d s (tab) features z international standard packages z unclamped inductive switching (uis) rated z low package inductance z 175c operating temperature z high current handling capability z rohs compliant z high performance trench technology for extremely low r ds(on) advantages z easy to mount z space savings z high power density z synchronous applications ? synchronous buck converters ? high current switching power supplies ? battery powered electric motors ? resonant-mode power supplies ? electronics ballast application ? class d audio amplifiers preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixta100n04t2 IXTP100N04T2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 27 45 s c iss 2690 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 490 pf c rss 105 pf t d(on) 12.0 ns t r 5.2 ns t d(off) 15.8 ns t f 6.4 ns q g(on) 25.5 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 8.0 nc q gd 5.7 nc r thjc 1.0 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 100 a i sm repetitive, pulse width limited by t jm 400 a v sd i f = 50a, v gs = 0v, note 1 1.2 v t rr 34 ns i rm 1.44 a q rm 24.5 nc notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 20v , i d = 0.5 ? i d25 r g = 5 (external) i f = 50a, v gs = 0v -di/dt = 100a/ s v r = 20v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved ixta100n04t2 IXTP100N04T2 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 012345678 v ds - volts i d - amperes v gs = 15v 8v 5v 6v 7v 9v 10v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 0.00.10.20.30.40.50.60.70.80.91.0 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 50a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 100a i d = 50a fig. 5. r ds(on) normalized to i d = 50a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. ixta100n04t2 IXTP100N04T2 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 102030405060708090100110 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 101214161820222426 q g - nanocoulombs v gs - volts v ds = 20v i d = 50a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 100s 10ms 100ms r ds(on) limit dc
? 2008 ixys corporation, all rights reserved fig. 14. resistive turn-on rise time vs. drain current 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 20 30 40 50 60 70 80 90 100 i d - amperes t r - nanoseconds r g = 5 ? v gs = 10v v ds = 20v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 4 6 8 101214161820 r g - ohms t r - nanoseconds 9 10 11 12 13 14 15 16 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 50a, 100a fig. 16. resistive turn-off switching times vs. junction temperature 3 4 5 6 7 8 9 10 11 12 13 14 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 12 13 14 15 16 17 18 19 20 21 22 23 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 20v i d = 100a i d = 50a i d = 100a fig. 17. resistive turn-off switching times vs. drain current 2 4 6 8 10 12 14 16 18 20 20 30 40 50 60 70 80 90 100 i d - amperes t f - nanoseconds 10 12 14 16 18 20 22 24 26 28 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 20v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? v gs = 10v v ds = 20v i d = 50a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 4 6 8 101214161820 r g - ohms t f - nanoseconds 0 10 20 30 40 50 60 70 80 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 50a i d = 100a
ixys reserves the right to change limits, test conditions, and dimensions. ixta100n04t2 IXTP100N04T2 fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_100n04t2(v2) 4-23-08
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